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设计并研制了由InAsP/InGaAsP应变补偿多量子阱有源层、SiO2/TiO2介质薄膜和GaAs/Al(Ga)As半导体分布布拉格反射镜(DBR)构成的垂直腔面发射激光器(VCSEL).采用直接键合技术实现InP基有源层与GaAs基DBR的晶片融合,并经过侧向湿法腐蚀定义电流限制孔径和沉积介质薄膜DBR等关键器件工艺,研制出InAsP/InGaAsP量子阱垂直腔面发射激光器,其阈值电流为13.5mA,单模激射波长为1288.6nm.
A vertical cavity surface emitting laser (VCSEL) consisting of InAsP / InGaAsP strain compensated MQW active layer, SiO2 / TiO2 dielectric thin film and GaAs / Al (Ga) As semiconductor distributed Bragg reflector (DBR) Direct bonding technology to achieve the InP-based active layer and GaAs-based DBR chip fusion, and after the lateral wet etching to define the current limiting aperture and the deposition of dielectric thin film DBR and other key device technology, developed InAsP / InGaAsP quantum well vertical cavity surface emission The laser has a threshold current of 13.5 mA and a single-mode lasing wavelength of 1288.6 nm.