论文部分内容阅读
电磁干扰对于电子设备的影响日益明显,因此对其干扰机理的研究至关重要。该文采用器件物理模拟的方法,利用自主开发的2维半导体器件-电路联合仿真器,研究了CMOS传输门在频率从1MHz到20GHz,功率从-2到24dBm电磁干扰作用下的响应。仿真结果表明:低频电磁干扰只要使得PMOS管或者NMOS管导通,电磁干扰就会在CMOS传输门断开的状态下通过;而高频电磁干扰则主要通过NMOS管的本征电容耦合到输出端,同时由于本征电容的旁路滤波作用受到一定的抑制。
The impact of electromagnetic interference on electronic equipment is becoming increasingly evident, so the study of its interference mechanism is very important. In this paper, the method of device physics simulation is used to study the response of CMOS transmission gate under the electromagnetic interference of frequency from -2MHz to 24dBm with the frequency of 1MHz to 20GHz and the self-developed 2-D semiconductor device-circuit simulator. The simulation results show that as long as the low-frequency electromagnetic interference makes the PMOS transistor or the NMOS transistor turn on, electromagnetic interference will pass through with the CMOS transmission gate disconnected. However, the high-frequency electromagnetic interference is mainly coupled to the output terminal through the intrinsic capacitance of the NMOS transistor At the same time, the bypass capacitor of the intrinsic capacitor is restrained to some extent.