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In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors(p HEMTs) and Si complementary metal–oxide semiconductor(CMOS) on the same Silicon substrate.Ga As p HEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique,and the best alignment accuracy of 5 μm is obtained.As a circuit example,a wide band Ga As digital controlled switch is fabricated,which features the technologies of a digital control circuit in Si CMOS and a switch circuit in Ga As p HEMT,15% smaller than the area of normal Ga As and Si CMOS circuits.
In this work, we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors (p HEMTs) and Si complementary metal-oxide semiconductor (CMOS) on the same silicon substrate. Ga As p HEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique, and the best alignment accuracy of 5 μm is obtained. As a circuit example, a wide band Ga As digital controlled switch is fabricated, which features the technologies of a digital control circuit in Si CMOS and a switch circuit in Ga As p HEMT, 15% smaller than the area of normal Ga As and Si CMOS circuits.