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展示了由碳纳米管场效应管构成的三种逻辑电路,分别为单个p型碳纳米管场效应管的开关电路、由集成在同一片硅片上的单个p型碳纳米管场效应管和单个n型掺氮碳纳米管场效应管构成的互补型反相器,以及两个独立的p型碳纳米管场效应管构成的或非门.其中p型碳纳米管场效应管以单壁碳纳米管作为沟道,而n型碳纳米管场效应管则以掺氮的多壁碳纳米管作为沟道,器件的源漏电极均为铂电极.
Shows three kinds of logic circuits composed of carbon nanotube field effect transistors, respectively, a single p-type carbon nanotube FET switching circuit, integrated by the same piece of silicon on a single p-type carbon nanotube FET and A single n-type doped carbon nanotube FET composed of complementary inverters, and two independent p-type carbon nanotube FET or NOR gate structure which p-type carbon nanotube FET with single-walled Carbon nanotubes as the channel, and the n-type carbon nanotube FET is doped with nitrogen-doped multi-walled carbon nanotubes as the channel, the source and drain electrodes are platinum electrodes.