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The Sb6Te4/VO2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail.Compared with Sb6Te4,Sb6Te4/VO2 multilayer composite thin films have higher phase change temperature and crystallization resistance,indicating better thermal stability and less power consumption.Also,Sb6Te4/VO2 has a broader energy band of 1.58 e V and better data retention (125℃ for 10 y).The crystallization is suppressed by the multilayer interfaces in Sb6Te4/VO2 thin film with a smaller rms surface roughness for Sb6Te4/VO2 than monolayer Sb4Te6.The picosecond laser technology is applied to study the phase change speed.A short crystallization time of 5.21 ns is realized for the Sb6Te4 (2 nm)/VO2 (8 nm) thin film.The Sb6Te4/VO2 multilayer thin film is a potential and competitive phase change material for its good thermal stability and fast phase change speed.