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本文讨论了一种新型ＨＥＭＴ沟这结构，它由ＩｎＧａＡｓ和ＩｈＰ组成，利用了低电场下ＩｎＧａＡｓ的高电子迁移率和高电场下ＩｎＰ的高漂移速率。０．６μｍ和０．７μｍ栅长的器件上获得了１２９０ｍＳ／ｍｍ的高跨导和６８．７ＧＨｚ的ｆ＿Ｔ。研究了器件的直流和射频特性。估计有效电子饱和速率为４．２×１０￣７ｃｍ／ｓ。
This paper discusses a new HEMT trench structure, which consists of InGaAs and IhP, which exploits the high electron mobility of InGaAs at low electric fields and the high drift rate of InP at high electric fields. A high transconductance of 1290 mS / mm and a f_T of 68.7 GHz were obtained on devices with gate lengths of 0.6 μm and 0.7 μm. The DC and RF characteristics of the device were investigated. The estimated effective electron saturation rate is 4.2 × 10 ~ 7cm / s.