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目前,AlGaInP大功率发光二极管(LED)存在的主要问题是大电流工作时发热严重,主要是由于电流扩展不均匀、出光面电极对光子的阻挡和吸收以及器件材料与空气折射率之间的差距引起的全反射现象,这些因素造成大功率LED出光受到限制、发光效率低、亮度不高.提出了一种复合电流扩展层和复合分布式布拉格反射层(DBR)的新型结构LED,使得注入电流在有源区充分地扩散,同时提高了常规单DBR对光子的反射率.结果显示,这种新型结构LED比常规结构LED的性能得到了很大的提升,350mA注入电流下两者的输出光功率分别为49.48和17mW(未封装).同时,对器件发热进行了量化测试,分析了LED发光效率与结温的关系,在350mA注入电流下新型结构LED与常规结构LED的流明效率的比值与结温升的比值保持一致,通过减少内部发热,控制结温可以大大提高LED的发光效率.
Currently, AlGaInP high-power light-emitting diode (LED) there is a major problem is that high-current work serious fever, mainly due to uneven current spreading, the smooth electrode photon barrier and absorption and the refractive index of the device material and the gap between the air The total reflection caused by these factors led to high power LED light output is limited, low luminous efficiency, brightness is not high.A composite current spreading layer and composite distributed Bragg reflector (DBR) of the new LED structure, making the injection current The results show that the performance of this new type of LED is much higher than that of the conventional LED, and the output light of the two at 350mA injection current The power is 49.48 and 17mW, respectively (unpackaged) .At the same time, the heat of the device is quantitatively tested, and the relationship between LED luminous efficiency and junction temperature is analyzed. The ratio of the lumen efficiency of the new structure LED to the conventional structure LED at 350mA injection current is Junction temperature rise ratio to maintain the same, by reducing the internal heat, the junction temperature can greatly improve the LED luminous efficiency.