论文部分内容阅读
——本文介绍一种制备InP单晶的新工艺.工艺特点是实验周期短和沾污少.晶体电学参数已达到N_D-N_A=4.53×10~(15)cm~(-3)和μ_(77K)=29920cm~2/V·s.(111)In面的位错密度为10~3～10~4cm~(-2).单晶锭重约200克.在掺Sn-InP衬底上汽相外延生长的InP层用于制做体效应器件,在58.3GHz下有120mW的输出功率和2.08%的效率.
- This article describes a new process for the preparation of InP single crystal technology is characterized by short experimental period and less contamination. Crystal electrical parameters have reached N_D-N_A = 4.53 × 10 ~ (15) cm ~ (-3) and μ_ ( 77K) = 29920cm-2 / V · s. The dislocation density of (111) In surface is 10 ~ 3 ~ 10 ~ 4cm ~ 2. The phase-epitaxially grown InP layer was used to make body-effect devices with 120 mW output power and 2.08% efficiency at 58.3 GHz.