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采用直流射频耦合磁控溅射技术,以氧化锌掺铝(AZO,2%Al_2O_3,质量分数)陶瓷靶为靶材,在玻璃基片上低温沉积AZO薄膜,并采用质量分数为0.5%的HCl溶液刻蚀制备绒面AZO薄膜,通过XRD、SEM、分光光度计、霍尔效应测试系统、光电雾度仪等设备重点研究工作压强对直流射频耦合磁控溅射制备AZO薄膜的晶相结构、表面形貌、光电性能以及后期制绒的影响。研究表明,直流射频耦合磁控溅射可以在低温下制备性能优异的AZO薄膜,且随着工作压强的减小,致密性增强,光电性能改善,后期刻蚀得到具有良好陷光作用的绒面结构。在工作压强0.5 Pa下,低温制备的AZO薄膜电阻率达到3.55×10~(-4)Ω·cm,薄膜可见光透过达到88.36%,刻蚀后电阻率为4.19×10~(-4)Ω·cm,可见光透过率89.59%,雾度达24.7%。
The AZO thin film was deposited on the glass substrate by direct current radio frequency coupled magnetron sputtering with AZO (2% Al_2O_3, mass fraction) ceramic target as the target. The mass fraction of 0.5% HCl solution The superalloy AZO thin films were etched to fabricate the AZO thin films by XRD, SEM, spectrophotometer, Hall effect test, photoelectron haze meter and other devices. The crystal structure of the AZO films prepared by DC RF magnetron sputtering was studied. Morphology, optoelectronic properties and the impact of the late cashmere. The results show that DC RF magnetron sputtering can be used to prepare AZO thin films with good performance at low temperature. With the reduction of working pressure, the compactness is enhanced and the optoelectronic properties are improved. Afterwards, the superalloy has good trapping effect structure. The resistivity of AZO thin films prepared at low temperature reached 3.55 × 10 -4 Ω · cm at the working pressure of 0.5 Pa, the visible light transmittance reached 88.36% and the resistivity after etching was 4.19 × 10 -4 Ω · Cm, visible light transmittance of 89.59%, haze up to 24.7%.