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为提高聚酰亚胺薄膜的击穿场强和耐电晕性能,分别采用气相纳米Al_2O_3颗粒、非气相纳米Al_2O_3颗粒制备了聚酰亚胺杂化薄膜。通过热激电流(TSC)、耐电晕性能、击穿场强等测试,分别评价了薄膜的陷阱能级、陷阱密度分布趋势、耐电晕性能和击穿场强,并用扫描电子显微镜对薄膜断面进行形貌分析。结果表明:纯聚酰亚胺、非气相纳米Al_2O_3杂化聚酰亚胺薄膜、气相纳米Al_2O_3杂化聚酰亚胺薄膜电荷陷阱密度依次上升,同时陷阱能级有降低的趋势;与纯聚酰亚胺薄膜相比,气相纳米Al_2O_3的掺杂使薄膜的击穿场强由170 k V/mm提高至241 k V/mm;与非气相Al_2O_3杂化的薄膜相比,气相纳米Al_2O_3的掺杂使薄膜的耐电晕时间由24.25 h提高至43.45 h,同时气相纳米颗粒更不容易发生团聚,提高了纳米颗粒的分散性。气相纳米Al_2O_3颗粒的掺杂使聚酰亚胺引入了更多的界面态及缺陷,使其陷阱密度提高,有效提升了聚酰亚胺薄膜的耐电晕性能及击穿场强。
In order to improve the breakdown field strength and corona resistance of polyimide films, polyimide hybrid films were prepared by using gas-phase nano-Al 2 O 3 particles and non-gas-phase nano Al 2 O 3 particles respectively. The trapping energy level, trap density distribution trend, corona resistance and breakdown field strength were evaluated respectively by TSC, corona resistance and breakdown field strength. The scanning electron microscopy Section morphology analysis. The results show that the charge trap densities of pure polyimide, non-gas-phase nano-Al 2 O 3 hybrid polyimide film and gas-phase nano Al 2 O 3 hybrid polyimide film increase in turn while the trap energy level tends to decrease. Compared with pure polyamide Compared with the non-gas-phase Al 2 O 3 hybridized films, the doping of the gas-phase nano-Al 2 O 3 films increased the breakdown field strength of the films from 170 k V / mm to 241 k V / mm. The corona-resistant time of the film was increased from 24.25 h to 43.45 h, meanwhile, the gas-phase nanoparticles were less likely to agglomerate and the dispersibility of the nanoparticles was improved. The doping of gas-phase nano-Al 2 O 3 particles led to the introduction of polyimides into more interface states and defects, resulting in higher trap density and improved corona resistance and breakdown strength of the polyimide film.