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5. ,Diode-Pumped Passively Q-Switched Yb:YAG Microchip Laser with a GaAs as Saturable Absorber

,Diode-Pumped Passively Q-Switched Yb:YAG Microchip Laser with a GaAs as Saturable Absorber

来源 :中国物理快报(英文版) | 被引量 : 0次 | 上传用户：qq414363439

【摘 要】

：

A passively Q-switched Yb: YAGmicrochip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of p

【作 者】

：

ZHANG Qiu-Lin(张秋琳) FENG Bao-Hua(冯宝华) ZHANG Dong-Xiang(张东香) FU Pan-Ming(傅盘铭) ZHANG Zhi-Guo(张治国) ZHAO Zhi-Wei(赵志伟) DENG Pei-Zhen(邓佩珍) XU Jun(徐军) XU Xiao-Dong(徐晓东) WANG Yong-Gang(王勇刚) MA Xiao-Yu(马骁宇) 

【机 构】

：

Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080“,”I

【出 处】

：

中国物理快报(英文版)

【发表日期】

：

2003年10期

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A passively Q-switched Yb: YAGmicrochip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4μJ 52ns pulses at 1030nm with a pulse repetition rate of 7.8kHz in a TEMoo-mode.

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