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据《O plus E》(日)2003年第9期报道,日立制作所正着手开发使用SiGe衬底的80Gbit光通信IC。高速光通信IC通常使用价格昂贵的GaAs衬底等化合物半导体材料。日立制作所采用分割多重技术,并使用SiGe衬底材料,使低价格优质产品投放市场。随着高速化光通信网的快速发展,80 Gbit光通信IC的需求不断增加,开发SiGe衬底80 Gbit IC是对GaAsIC的一次挑战。
According to the “O plus E” (Japan) No. 9 2003 report, Hitachi is working to develop the use of SiGe substrate 80Gbit optical communications IC. High-speed optical communication ICs usually use expensive semiconductor materials such as GaAs substrates. Hitachi has adopted multi-division technology and SiGe substrate materials to make low-priced and high-quality products available on the market. With the rapid development of high-speed optical communication networks, the demand for 80 Gbit optical communication ICs continues to increase. The development of SiGe substrate 80 Gbit ICs is a challenge to GaAsIC.