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基于130 nm CMOS工艺,设计了工作于K波段的双平衡下变频混频器。在传统吉尔伯特单元基础上采用电流复用注入结构,减小了开关级的偏置电流,提升了开关性能。在开关级源端引入谐振电感,消除了开关共源节点处的寄生电容,抑制了射频信号的泄露,提高了增益,减小了噪声。仿真结果表明,输入射频信号为24 GHz,本振信号为24.5 GHz,本振输入功率为-3 d Bm时,该混频器的转换增益为25.8 d B,单边带噪声系数为6.4 d B,输入3阶互调截点为-8.6 d Bm。
Based on the 130 nm CMOS process, a dual-balanced down-conversion mixer operating in the K-band is designed. In the traditional Gilbert cell based on the use of current multiplexing injection structure, reducing the switching stage of the bias current, improved switching performance. Introducing the resonant inductor at the switching-level source end eliminates the parasitic capacitance at the common-source node of the switch, suppresses the leakage of the RF signal, increases the gain, and reduces the noise. Simulation results show that when the input RF signal is 24 GHz, the local oscillator signal is 24.5 GHz and the LO input power is -3 d Bm, the conversion gain of the mixer is 25.8 dB and the single-sideband noise figure is 6.4 dB , Enter the 3rd order intermodulation intercept point of -8.6 d Bm.