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Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray.The thin films were deposited at three different substrate temperatures of 300,350 and 400℃.The obtained films had a hexagonal wurtzite structure with a strong(002) preferred orientation.The maximum crystallite size value of the film deposited at 350℃is 55.46 nm.Spectrophotometer(UV-vis) of a Co doped ZnO film deposited at 350℃shows an average transmittance of about 90%.The band gap energy increased from 3.351 to 3.362 eV when the substrate temperature increased from 300 to 350℃.The electrical conductivity of the films deposited at 300,350 and 400℃were 7.424,7.547 and 6.743(Ω·cm)~(-1) respectively.The maximum activation energy value of the films at 350℃was 1.28 eV,indicating that the films exhibit a n-type semiconducting nature.
Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray. Thin films were deposited at three different substrates temperatures of 300,350 and 400 ° C. The obtained films had a hexagonal wurtzite structure with a strong (002) preferred orientation. The maximum crystallite size value of the film deposited at 350 ° C is 55.46 nm. Spectrophotometer (UV-vis) of a Co doped ZnO film deposited at about 90% anaverage transmittance of 350 ° C. The band gap energy increased from 3.351 to 3.362 eV when the The electrical conductivity of the films deposited at 300,350 and 400 ° C were 7.424, 7.547 and 6.743 (Ω · cm) -1 (respectively). The maximum activation energy value of the films at 350 ° C was 1.28 eV, indicating that the films exhibit a n-type semiconducting nature.