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Within the effective-mass approximation, we calculated the influence of strain on the binding energy of a hydrogenic donor impurity by a variational approach in a cylindrical wurtzite GaN/AlxGa1-xN strained quantum dot, including the strong built- in electric field effect due to the spontaneous and piezoelectric polarization. The results show that the binding energy of impurity decreases when the strain is considered. Then the built-in electric field becomes bigger with the Al content increasing and the binding energy of hydrogenic donor impurity decreases when the Al content is increasing. For dot height L < 2 nm, the change of the binding energy is very small with the Al content variety.
Within the effective-mass approximation, we calculated the influence of strain on the binding energy of a hydrogenic donor impurity by a variational approach in a cylindrical wurtzite GaN / AlxGa1-xN strained quantum dot, including the strong built-in electric field effect due to the spongeneous and piezoelectric polarization. The results show that the binding energy of an increased biomass when the strain is considered. Then the built-in electric field becomes bigger with the Al content increasing and the binding energy of hydrogenic principle increasing. For dot height L <2 nm, the change of the binding energy is very small with the Al content variety.