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本工作研究了同时形成polycide栅,源/漏硅化钛接触和浅PN结的MOS器件制造技术。实验结果表明,通过硅化钛薄膜注入As,并利用NH_3等离子体辅助热退火(NPTA)工艺,可制备性能良好的MOS晶体管。以注入杂质的硅化钛薄膜作为杂质源,在一次高温退火过程中同时完成杂质的再分布和低电阻率硅化钛的形成,得到结深小于0.1μm,硅化钛电阻率24μΩ·cm。NPTA退火工艺有效地抑制了Ti/Si和Ti/poly-Si固相反应过程中硅化钛的横向生长,从而获得了自对准程度很高的硅化钛接触和互连。
This work has investigated the fabrication of MOS devices that simultaneously form polycide gates, source / drain titanium silicide contacts, and shallow PN junctions. The experimental results show that MOS transistors with good performance can be prepared by implanting As into the Ti silicide film and using the NH 3 plasma-assisted thermal annealing (NPTA) process. Impurity titanium silicide film as an impurity source in a high-temperature annealing process to complete the redistribution of impurities and the formation of low-resistivity titanium silicide, resulting junction depth is less than 0.1μm, titanium silicide resistivity of 24μΩ · cm. The NPTA annealing process effectively suppresses the lateral growth of titanium silicide during the solid state reaction of Ti / Si and Ti / poly-Si, resulting in a high self-aligned titanium silicide contact and interconnection.