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谐振隧道热电子晶体管(RHET)是一种新型的具有极高频特性的三端器件。前不久,由于采用了InGaAs/InAlAs赝异质结,使器件的集电极电流峰-谷比和微波特性得到了改进。但是在低的集电极-基极电压情况下,器件的电流增益较差,不适合电路应用。 《Electronics Letters》1991年8月报道一种新型的集电极势垒结构RHET,它能改善集电极-基极低电压时的电流增益,从而使器件的微波特性进一步改善。在新结构中i-In_(0.52)(Al_(0.5)Ga_(0.5)_(0.48)As势垒厚度从原来的200nm减到50nm。由于电子只要克服较薄的势垒就能到达集电极,这就使在低的集电极-基极电压下增大了器件的电流增益。器件的发射极谐振隧
Resonant Tunneling Thermionic Transistor (RHET) is a new type of three-terminal device with very high frequency characteristics. Not long ago, due to the use of InGaAs / InAlAs pseudo-heterojunction, the device collector current peak-to-valley ratio and microwave characteristics have been improved. However, with low collector-base voltage, the current gain of the device is poor and not suitable for circuit applications. “Electronics Letters” August 1991 reported a new type of collector barrier structure RHET, which can improve the collector-base low-voltage current gain, so that the device to further improve the microwave characteristics. In the new structure, the thickness of the i-In_ (0.52) (Al_ (0.5) Ga_ (0.5) _ (0.48) As) barrier is reduced from 200 nm to 50 nm.As electrons overcome the thinner potential barrier and reach the collector, This increases the current gain of the device at low collector-base voltages. The device’s emitter resonant tunnel