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禁带宽度和少子复合寿命是硅晶体管发射区中重要的物理参数。本文利用p-n结反向扩散电流的温度特性和借助于线性外推法,提出了一种确定绝对零度时禁带宽度的新方法。由于发射区重掺杂,本文考虑了载流子的费米-狄拉克统计分布。提出了确定发射区中少子复合寿命的方法。该方法简便实用。
Bandgap and low minority recombination lifetime are important physical parameters in the emitter region of a silicon transistor. In this paper, a new method to determine the forbidden band width at absolute zero is proposed by using the temperature characteristic of the reverse diffusion current of p-n junction and by means of linear extrapolation. Due to the heavily doped emitter region, we consider the Fermi-Dirac statistical distribution of carriers. A method to determine the lifetime of minority-son recombination in the emission region is proposed. This method is simple and practical.