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基于国产的SiC衬底GaN外延材料,研制出大栅宽GaN HEMT单胞管芯。通过使用源牵引和负载牵引技术仿真出所设计模型器件的输入输出阻抗,推导出本器件所用管芯的输入输出阻抗。使用多节λ/4阻抗变换线设计了宽带Wilkinson功率分配/合成器,对原理图进行仿真,优化匹配网络的S参数,对生成版图进行电磁场仿真,通过LC T型网络提升管芯输入输出阻抗。采用内匹配技术,成功研制出铜-钼-铜结构热沉封装的四胞内匹配GaN HEMT。在频率为2.7～3.5 GHz、脉宽为3 ms、占空比为50%、栅源电压Vgs为-3 V和漏源电压Vds为28 V下测试器件,得到最大输出功率Pout大于100 W(50 dBm),PAE大于47%,功率增益大于13 dB。
Based on the domestic SiC substrate GaN epitaxial material, developed a large gate width GaN HEMT single cell die. By using the source traction and load traction technology to simulate the input-output impedance of the designed model device, the input-output impedance of the die used in the device is deduced. The wideband Wilkinson power splitter / synthesizer is designed using multi-segment λ / 4 impedance transformation lines. The schematic is simulated to optimize the S-parameters of the matching network. The generated layout is simulated by electromagnetic field. The input and output impedance of the die is improved by the LC T-type network . The intra-matching GaN HEMT has been developed successfully by the copper-molybdenum-copper heat-sink encapsulation using the internal matching technique. The maximum output power Pout is greater than 100 W for a test device with a frequency of 2.7 to 3.5 GHz, a pulse width of 3 ms, a duty cycle of 50%, a gate-source voltage Vgs of -3 V and a drain-source voltage Vds of 28 V 50 dBm), PAE is greater than 47% and power gain is greater than 13 dB.