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We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering.Optical and structural properties of the thin films were characterized using various techniques.At 6 V bias,a responsivity higher than 4 A/W in the wavelength shorter than 350 nm was obtained,and this responsibility dropped quickly and reached the noise floor in the visible region.Transient response measurement revealed that the detector had a fast photoresponse with a rise time of 9 ns and a fall time of 1.2 μs.
We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering. Optical and structural properties of the thin films were characterized by various techniques. At 6 V bias, a responsivity higher than 4 A / W in the wavelength shorter than 350 nm was obtained, and this liability was quickly and reached the noise floor in the visible region. Transient response measurement revealed that the detector had a fast photoresponse with a rise time of 9 ns and a fall time of 1.2 μs.