We demonstrate the dipole-assisted carrier transport properties of bis(trifluoromethane)sulfonamide (TFSI)-treated O-ReS2 field-effect transistors.Pristine ReS2 was compared with defect-mediated ReS2 to confirm whether the presence of defects on the interface enhances the interaction between O-ReS2 and TFSI molecules.Prior to the experiment,density functional theory (DFT) calculation was performed,and the result indicated that the charge transfer between TFSI and O-ReS2 is more sensitive to external electric fields than that between TFSI and pristine ReS2.After TFSI treatment,the drain current of O-ReS2 FET was significantly increased up to 1,113.4 times except in the range of-0.32-0.76 V owing to Schottky barrier modulation from dipole polarization of TFSl molecules,contrary to a significant degradation in device performance in pristine ReS2 FET.Moreover,in the treated O-ReS2 device,the dipole direction was highly influenced by the voltage sweep direction,generating a significant area of hysteresis in Ⅰ-Vand transfer characteristics,which was further verified by the surface potential result.Furthermore,the dipole state was enhanced according to the wavelength of the light source and photocurrent.These results indicate that TFSI-treated ReS2 FET has large potential for use as next-generation memristor,memory,and photodetector.