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利用无催化选区金属有机化学气相沉积(SA-MOCVD)法在GaAs(111)B衬底上分别制备了GaAs纳米线和GaAs/InxGa1-xAs/GaAs纳米线径向异质结构.系统地研究了生长条件对GaAs纳米线生长的影响.实验结果显示,GaAs纳米线的形貌和长度依赖于生长温度、AsH3的分压以及SiO2掩膜表面的圆孔直径.因此可以通过调节以上因素来得到高质量的GaAs纳米线.并且发现扩散是影响无催化选区生长GaAs纳米线的主要机理.微区光致发光谱(μ-PL)表明,GaAs/InxGa1-xAs/GaAs纳米线径向异质结构被成功合成,室温(300 K)下它的发光波长为913 nm.这些结果对于GaAs纳米线及其异质结构制备的进一步研究及其在光电子器件中的应用具有很好的参考价值.
GaAs nanowires and GaAs / InxGa1-xAs / GaAs nanowire radial heterostructures were prepared on GaAs (111) B substrate by catalytic selective metalorganic chemical vapor deposition (SA-MOCVD) Growth conditions on the growth of GaAs nanowires.The experimental results show that the morphology and length of GaAs nanowires depend on the growth temperature, the partial pressure of AsH3 and the diameter of the hole on the surface of the SiO2 mask.Thus it can be obtained by adjusting the above factors to be high Mass of GaAs nanowires. And it is found that diffusion is the main mechanism that affects the growth of GaAs nanowires in the catalystless region. The μ-PL shows that the radial heterostructure of GaAs / InxGa1-xAs / GaAs nanowires is It was successfully synthesized and its emission wavelength was 913 nm at room temperature (300 K) .These results have very good reference value for the further study on the preparation of GaAs nanowires and their heterostructures and their application in optoelectronic devices.