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利用自制的冷壁石英腔 UHV/CVD设备 ,60 0℃条件下 ,通过 Ge组分渐变缓冲层技术 ,在 Si( 1 0 0 )衬底上成功地生长出完全弛豫、无穿透位错的 Si0 .83Ge0 .17外延层 ,并在其上获得了具有张应变的 Si盖帽层 .另外 ,还在 550℃下生长了同样结构的样品 ,发现此样品厚度明显变薄 ,组分渐变层的应变释放不完全 ,位错网稀疏而且不均匀 ,其上的 Si0 .83Ge0 .17外延层具有明显的穿透位错
Using a homemade cold-wall quartz-chamber UHV / CVD apparatus, completely relaxed and non-penetrating dislocations were successfully grown on a Si (100) substrate by a Ge composition graded buffer layer technique at 60 ° C Of Si0.83Ge0.17 epitaxial layer and obtained thereon a tensile strain of the Si cap layer In addition, the sample was also grown at 550 ℃ the same structure and found that the thickness of the sample was significantly thinned, the composition of the graded layer Strain relief is incomplete, the dislocation network is sparse and uneven, and the epitaxial layer of Si0.83Ge0.17 on it has obvious threading dislocations