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利用纤维涂层法(FMC)、结合热压工艺制备了SiC纤维增强Ti55基复合材料(SiCf/Ti55)。主要研究复合材料在经不同条件真空热暴露处理后,其反应产物相形成的反应序列以及界面反应动力学。结果表明,仅C、Si和Ti等元素参与了界面反应。在1000°C热暴露时,SiCf/Ti55复合材料界面反应产物序列为SiC|Ti3SiC2|Ti5Si3+TiC|TiC|Ti55。但是,在低温热暴露的复合材料中不存在Ti3SiC2相。SiCf/Ti55复合材料界面反应产物的生长受扩散控制且遵循抛物线生长规律,其生长激活能Qk及指数系数k0分别为198.16kJ·mol-1,1.79×10-3m·s-1/2。相比SiCf/Ti复合材料和SiCf/Ti2AlNb复合材料,SiCf/Ti55复合材料拥有一个高稳定性的界面。然而,相比SiCf/Ti600复合材料和SCS-6SiCf/superа2复合材料,SiCf/Ti55复合材料中的纤维与基体更容易发生反应,且界面层更容易生长。
SiC fiber reinforced Ti55 matrix composites (SiCf / Ti55) were prepared by fiber coating method (FMC) combined with hot pressing. The main research is the reaction sequence of the reaction product phase and the reaction kinetics of the composite after vacuum heat exposure under different conditions. The results show that only C, Si and Ti and other elements involved in the interface reaction. At 1000 ° C heat exposure, the interfacial reaction product sequence of SiCf / Ti55 composites is SiC | Ti3SiC2 | Ti5Si3 + TiC | TiC | Ti55. However, the Ti3SiC2 phase does not exist in the low temperature thermally exposed composite. The growth of interfacial reaction products of SiCf / Ti55 composites was controlled by diffusion and followed the parabolic growth law. The growth activation energy Qk and exponential coefficient k0 were 198.16kJ · mol-1,1.79 × 10-3m · s-1/2, respectively. Compared with SiCf / Ti composites and SiCf / Ti2AlNb composites, SiCf / Ti55 composites have a high stability interface. However, compared with SiCf / Ti600 composites and SCS-6SiCf / superа2 composites, the fibers in SiCf / Ti55 composites are more likely to react with the matrix, and the interfacial layer is easier to grow.