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通过测量高频Ｃ－Ｖ迟滞曲线研究了ＭＯＳ电容中慢界面态的特性．发现金属化后退火（ＰＭＡ）前电容中的慢界面态分布在禁带中央以下的能级，但ＰＭＡ后完全消失；相反，ＦｏｗｌｅｒＮｏｒｄｈｅｉｍ高电场应力引起的慢界面态能级高于禁带中央．并探讨了这些慢态的微观机理．
The characteristics of slow interface states in MOS capacitors were investigated by measuring high-frequency C-V hysteresis curves. It is found that the slow interface states in the capacitance before PMA are distributed below the center of the forbidden band but disappear completely after PMA. On the contrary, the slow interface states induced by Fowler Nordheim high electric field stress are higher than the center of the forbidden band. And explored these slow microscopic mechanisms.