日本电气基础研究所最近成功地研究了划时代的半导体材料,可以实现门开关速度突破10 ps 的超高速元件。这种材料是一种在 GaAs 基片上重叠10～几十层周期短的原子层(GaAs、AlAs 等)的超晶格。该材料最大特点是采用本公司独立研制的超掺杂结构,即在特定层中只添加杂质 The Japan Electric Basic Research Institute has recently successfully researched epoch-making semiconductor materials that enable ultra-high speed devices with gate switching speeds exceeding 10 ps. This material is a superlattice of atomic layers (GaAs, AlAs, etc.) that overlap in short periods of 10 to several tens of layers on a GaAs substrate. The most prominent feature of the material is the use of our company independently developed ultra-doping structure, that is, only add impurities in a particular layer