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本文叙述了一个具有150,000单元的20毫微秒不破坏读出的磁膜存贮器的字选择和字驱动方案的设计原理,且通过剖面性实验作了修改。字线的一头配匹,另一头由高速驱动电路驱动,这种电路与集成电路工艺相适配,驱动器和译码矩阵相连接。本文也描述了一个合适的译码矩阵线驱动器,它能提供不同幅度和宽度的脉冲,作为“读”和“写”用,“读”操作50兆周,“写”操作20兆周。对于64个输出的剖面性实验表明,这种系统具有实用性。与存贮器模型连接进行操作表明,存取时间为30毫微秒。
This paper describes the design principle of a word-select and word-driven scheme of a 150-nanosecond 20ns-long non-destructive magnetic memory and is modified by a cross-sectional experiment. The other end of the word line is driven by a high-speed driver circuit. The circuit is compatible with the integrated circuit technology, and the driver is connected with the decoding matrix. This paper also describes a suitable decoder matrix line driver that can provide pulses of different amplitudes and widths for read and write operations of 50 MB for Read and 20 MB for Write. The cross-sectional experiment on 64 outputs shows that this system is practical. The connection to the memory model indicates that the access time is 30 nanoseconds.