Effect of Substrate and Annealing Temperatures on Mechanical Properties of Ti-rich NiTi Films

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The effect of substrate and annealing temperatures on mechanical properties of Ti-rich NiTi films deposited on Si (100) substrates by DC magnetron sputtering was studied by nanoindentation.NiTi films were deposited at two substrate temperatures viz.300 and 400 ℃.NiTi films deposited at 300 ℃ were annealed for 4 h at four different temperatures,i.e.300,400,500 and 600 C whereas films deposited at 400 ℃ were annealed for 4 h at three different temperatures,i.e.400,500 and 600 ℃.The elastic modulus and hardness of the films were found to be the same in the as-deposited as well as annealed conditions for both substrate temperatures.For a given substrate temperature,the hardness and elastic modulus were found to remain unchanged as long as the films were amorphous.However,both elastic modulus and hardness showed an increase with increasing annealing temperature as the films become crystalline.The results were explained on the basis of the change in microstructure of the film with change in annealing temperature. The effect of substrate and anoxic temperatures on mechanical properties of Ti-rich NiTi films deposited on Si (100) substrates by DC magnetron sputtering was studied by nanoindentation. NiTi films were deposited at two substrates temperatures of viz. 300 and 400 ° C. NiTi films deposited at 300 ° C were annealed for 4 h at four different temperatures, ie 300, 400, 500 and 600 C of films deposited at 400 ° C were annealed for 4 h at three different temperatures, ie 400,500 and 600 ° C. The elastic modulus and hardness of the films were found to be the same in the as-deposited as well as annealed conditions for both substrate temperatures. For a given substrate temperature, the hardness and elastic modulus were found to remain unchanged as long as the films were amorphous. Both, both elastic modulus and hardness showed an increase with increasing annealing temperature as the films become crystalline. the results were explained on the basis of the change in microstructure of the film with ch ange in annealing temperature.
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