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研究了以氧、氮或它们的混合气体作为掺杂材料所制备的a-Si 薄膜,并分析了掺杂后对其光电特性的影响.在我们的实验室中,不掺杂的样品是高阻和低光电导的,然而在GD制备过程中引入适量的氧或氮,可使其暗电导和光电导发生很大变化,在合适的条件下,其典型值可分别增加七个和四个数量级.文中给出了暗电导、光电导与掺杂量的关系;不同掺杂材料的电导激活能;红外吸收谱和隙态密度分布曲线等.文章最后对结果作了推测性的讨论.并认为,在GD法制备非晶硅薄膜过程中,微量的氧和氮是导致材料光电特性分散的一个重要因素.
The a-Si thin films fabricated with oxygen, nitrogen or their mixed gases as dopant materials were investigated and their effect on the photoelectric properties after doping was analyzed.In our laboratory, undoped samples were high Resistance and low photoconductivity. However, the introduction of an appropriate amount of oxygen or nitrogen during the preparation of GD can greatly change the dark conductance and the photoconductivity. Under appropriate conditions, the typical values can be increased by seven and four orders of magnitude In this paper, the relationship between dark conductance, photoconductivity and doping amount is given, the conduction activation energy of different doping materials, the infrared absorption spectrum and the density distribution curve of the interstitial density, etc. The article concludes with speculative discussion and concludes that In the process of GD amorphous silicon thin film preparation, the trace oxygen and nitrogen is the material leading to the dispersion of an important factor in optoelectronic properties.