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为了实现双极型逻辑LSI的高速化、大容量化,有必要综合提高以下所述工艺、器件、电路等各方面的技术。缩小元件尺寸,减少隔离所占面积,对于谋求更大的集成度是非常重要的。现在双极型LSI一般是采用pn结隔离技术,但是近几年来,研究颇有成绩的氧化物隔离单块电路(Oxim)、集电极扩散隔离、等平面隔离等等新的隔离技术在改进这样的问题上是非常有效的。可以认为如果再用上自对准技术和精细加工技术等等,双极型ISI的大容量化是相当有希望的。
In order to increase the speed and capacity of a bipolar logic LSI, it is necessary to comprehensively improve the technologies of the following processes, devices and circuits. Reducing the size of components and reducing the area occupied by the isolation is very important for seeking greater integration. Bipolar LSIs are now generally based on pn junction isolation technology, but in recent years, new and improved oxide isolation monoliths (Oxim), collector diffusion isolation, iso-plane isolation, etc., are being improved The problem is very effective. It can be considered that if the re-use of self-alignment technology and fine processing technology and so on, bipolar ISI capacity is quite promising.