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在实验的基础上 ,分析脉冲激光诱导半导体InP掺杂Zn过程 ,利用简化的一维模型 ,在第三类边界条件下 ,给出一种较直观的脉冲激光辐照有限厚双层材料Zn/InP的温度分布解析形式
Based on the experiments, we analyzed the pulsed laser-induced InP doping process of Zn in semiconductors. By using the simplified one-dimensional model, a more straightforward pulsed laser irradiated Zn / InP temperature distribution analytical form