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在真空或惰性气体中制备的硅量子点发光很弱,硅量子点表面被氢较好钝化后的发光也不强.硅量子点表面的硅氧键或硅氮键能破坏这种钝化并在带隙中形成局域电子态,在局域电子态对应的激活中心有很强的发光.可以用这种方式构建发光物质,控制硅量子点表面的键合可获得不同波长的发光.在硅量子点的发光激活处理过程中,退火是很重要的环节.对于硅量子点发光激活的机理,本文给出了相应的物理模型.实验证明,在600和700 nm波长附近观察到了激活硅量子点的受激发光,在1500 nm到1600 nm波长范围观察到了激活硅量子点的较强发光.
The silicon quantum dots prepared in vacuum or inert gas have very weak luminescence and the luminescence of the silicon quantum dots surface is better after passivation by hydrogen. The silicon oxygen bond or silicon nitrogen bond on the surface of silicon quantum dots can destroy the passivation And forms a local electronic state in the bandgap and has a strong luminescence at the activation center corresponding to the local electronic state.It is possible to construct luminescent materials in this way and control the luminescence of different wavelengths by controlling the bonding on the surface of the silicon quantum dots. Annealing is a very important part in the process of luminescence activation of silicon quantum dots. For the mechanism of the luminescence activation of silicon quantum dots, a corresponding physical model is given in this paper. It has been experimentally demonstrated that activated silicon Quantum dot stimulated luminescence, strong luminescence of activated silicon quantum dots was observed in the wavelength range of 1500 nm to 1600 nm.