【摘 要】
：
A red organic light emitting diode doped with rubrene is constructed with the configuration of ITO/NPB/Alq3:rubrene:DCM/Alq3/LiF/Al. In the device, N,N-bis-(1-n
【机 构】
：
National Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130023
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A red organic light emitting diode doped with rubrene is constructed with the configuration of ITO/NPB/Alq3:rubrene:DCM/Alq3/LiF/Al. In the device, N,N-bis-(1-naphthl)-N,N:diphenyl-1,1-biphenyl-4,4-diamine (NPB) is used as the hole-transporting layer, tris(8-quinolinolato) aluminium (Alq3) as the electron-transporting layer and Alq3 doped with 5,6,11,12-tetraphenylnaphthacene (rubrene) and 4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) as the emitting layer. When the doping concentration of rubrene is 6% and that of DCM is 4%, red purity of the device is improved effectively. The experimental phenomena are explained as the result of the improved carrier transfer from rubrene to DCM.
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