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介绍了一种利用层错无损测量4H-SiC半导体材料外延层厚度的方法。该方法是根据4H-SiC同质外延生长中堆垛层错(stacking fault,SF)和外延层厚度的几何关系,通过测量在场发射扫描电子显微镜下观测到的SF沿[1100]方向边长的长度,计算出外延层厚度。与常用外延层厚度测量方法(红外干涉法)相比,这种无损测量方法更为简易精确。
A method for non-destructive measurement of the epitaxial layer thickness of 4H-SiC semiconductor materials by using layer faults is introduced. The method is based on the geometrical relationship between the stacking fault (SF) and the thickness of the epitaxial layer in 4H-SiC homoepitaxial growth by measuring the length of the SF along the [1100] direction observed under the field emission scanning electron microscope Length, calculate the epitaxial layer thickness. Compared with the commonly used method of measuring the thickness of epitaxial layers (infrared interferometry), this nondestructive measurement method is more simple and accurate.