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引言有机金属化学气相沉积(Mettallorganic Chemica1Vapor Deposition)简称MOCVD。这一技术是用有机金属化合物(MO)作为物质源,在一定温度下,在衬底基片上进行气相化学沉积(CVD)生长薄膜的技术。它是近一、二十年来发展起来的制膜新技术,主
Introduction Metallorganic chemical vapor deposition (MOCVD). This technique is a technique that uses a metal organic chemical (MO) as a source of material for vapor-phase chemical vapor deposition (CVD) growth of a thin film on a substrate at a certain temperature. It is the past one or two decades developed a new film technology, the Lord