一、引言砷化镓材料技术的进展,促使砷化镓微波集成电路、电荷耦合器件以及数字集成电路等技术的快速发展。砷化镓等Ⅲ-V族化合物半导体又具有内在的压电特性,因此为声表面波技术与半导体集成电路技术相结合并开发研制新型信号处理器件和分系统提供了新的可能性。但是,在载流子浓度较高的压电半导体上应用声表面波技术中传统的叉指换能器结 I. Introduction The progress of gallium arsenide materials technology has prompted the rapid development of technologies such as gallium arsenide microwave integrated circuits, charge-coupled devices and digital integrated circuits. III-V compound semiconductors, such as gallium arsenide, have inherent piezoelectric characteristics, thereby providing new possibilities for combining SAW technology with semiconductor integrated circuit technology and developing new types of signal processing devices and subsystems. However, the traditional interdigital transducer junction in surface acoustic wave technology is applied to piezoelectric semiconductors with higher carrier concentration