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用提拉法技术生长出了掺Bi的α-BaB2O4单晶并经过γ射线辐照.测定了样品在室温下的吸收光谱、发射光谱及荧光衰减曲线.在808nm波长光的激发下,经γ射线辐照后的α-BaB2O4单晶中发现了中心波长为1139nm、半高宽为113nm的近红外宽带发光现象.讨论了辐照条件和退火处理对Bi离子发光的影响.对于其发光机理进行了初步的探讨.
The bismuth-doped α-BaB2O4 single crystal was grown by Czochralski method and irradiated by γ-ray. The absorption spectrum, emission spectrum and fluorescence decay curve of the sample were measured at room temperature under the excitation of 808nm light. In the α-BaB2O4 single crystal irradiated by a ray, a near-infrared broad-band luminescence with a center wavelength of 1139 nm and a full width at half maximum of 113 nm was found, and the influence of the irradiation conditions and the annealing treatment on Bi ion luminescence was discussed. A preliminary discussion.