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基于脉冲激光沉积(PLD)技术在光寻址电位传感器(LAPS)表面上制备了Fe Ge Sb Se硫系玻璃薄膜,合成的靶材成分为Fe1.2(Ge28Sb12Se60)98.8,在Si/SiO2 基质上的金属层为Cr/Au,硫系玻璃薄膜对Fe3+敏感,显示了良好的重复性和稳定性.在1×10-5 ~1×10-2 mol/L呈现线性,斜率为(56±2) mV/decade,检测下限为5×10-6mol/L,当浓度高于1×10-4 mol/L时,响应时间不超过40 s;当低于此浓度时,响应时间不超过2 min.
Fe Ge Sb Se chalcogenide glass thin films were prepared on the surface of photo addressable potential sensor (LAPS) based on pulsed laser deposition (PLD) technology. The synthesized target was composed of Fe1.2 (Ge28Sb12Se60) 98.8 on Si / SiO2 substrate Of the metal layer is Cr / Au, and the chalcogenide glass thin film is sensitive to Fe3 +, showing good repeatability and stability. The linearity of the chalcogenide glass film is in the range of (1 5 ± 1) ) mV / decade, the detection limit is 5 × 10-6mol / L, when the concentration is higher than 1 × 10-4mol / L, the response time does not exceed 40s; when below this concentration, the response time does not exceed 2min .