引言砷化镓的宽禁带和高电子迁移率原则上适用于高频和高温器件的多样性。这些器件的大多数,诸如注入激光器、电光学相调制器、光阴极和转移电子振荡器都需要多薄层结构。分子束外延(MBE)提供了生长具有可控电学和物理学特性的薄单晶砷化镓的可能性, Introduction The wide band gap and high electron mobility of gallium arsenide are in principle suitable for the diversity of high frequency and high temperature devices. Most of these devices, such as injection lasers, electro-optic phase modulators, photocathodes and transfer electron oscillators, require multi-layer structures. Molecular beam epitaxy (MBE) offers the possibility of growing thin single crystalline gallium arsenide with controlled electrical and physical properties,