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提出了一种分析和了解微波功率 Ga As MESFET非线性效应的方法。主要是采用解析优化方法 ,提取 MESFET器件在不同偏置点下的本征元件 ,并结合器件的应用类型 ,对本征元件与偏置的关系进行了系统化的分析。分析的结论有助于提高微波功率 Ga As MESFET器件设计和应用的准确性
A method to analyze and understand the nonlinear effect of microwave GaAs MESFET is proposed. Mainly using analytic optimization method to extract the intrinsic components of MESFET devices under different bias points, and systematically analyzing the relationship between the intrinsic components and bias according to the application type of the device. The conclusions of the analysis help to improve the accuracy of microwave power Ga As MESFET device design and application