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在64楔环硅光电二极管阵列探测器(简称64阵列探测器)的研制工作中,采用离子注入损伤吸杂技术已获得良好的结果,它使64阵列探测器的暗电流明显下降,使平面pn结二极管的反向偏置耐压性显著提高,动态范围大有扩展,器件的其它性能也得到不同程度的改善,管芯合格率由30%提高到50%。目前,离子注入吸杂技术已作为一种常规工艺应用于64楔环硅光电二极管阵列探测器的研制。
In the development of 64 wedge-ring silicon photodiode array detector (referred to as 64 array detector), the use of ion implantation damage gettering technology has achieved good results, it makes the 64 array detector dark current decreased significantly, so that the plane pn The diode reverse bias withstand voltage was significantly improved, greatly expanded the dynamic range, the device’s other properties have also been improved to varying degrees, die pass rate increased from 30% to 50%. At present, the technology of ion implantation gettering has been developed as a conventional technology for 64-wedge silicon photodiode array detectors.