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基于静态腐蚀试验和Arrhenius公式,探讨了缓蚀剂1,2,4-三唑在铜晶圆表面的吸附机制,分析了其对铜晶圆表面化学反应活化能的影响;结合CMP试验,阐释了BTA和1,2,4-三唑两种缓蚀剂对CMP材料去除速率的影响.结果表明:在酸性抛光液中,缓蚀剂1,2,4-三唑主要存在两种缓蚀机制:一是在铜表面形成吸附膜Cu:(1,2,4-TAH)_(ads),二是形成聚合物膜Cu(1,2,4-TA)_2.CMP过程中化学反应活化能的降低量不随抛光液中1,2,4-三唑的含量而变化.但是相对于BTA,使用含有1,2,4-三唑的抛光液时CMP过程中晶圆表面的化学反应活化能降低量较大,表明机械促进化学作用较强.本研究结果为CMP过程中抛光液的优化提供了理论支撑.
Based on the static corrosion test and the Arrhenius formula, the adsorption mechanism of the corrosion inhibitor 1,2,4-triazole on the surface of the copper wafer was discussed and its influence on the activation energy of the chemical reaction on the surface of the copper wafer was analyzed. Combined with the CMP test, The effects of two corrosion inhibitors BTA and 1,2,4-triazole on the removal rate of CMP materials were studied.The results showed that there are two main corrosion inhibitors in acid polishing solution Mechanism: First, the adsorption film formed on the copper surface Cu: (1,2,4-TAH) _ (ads), the second is the formation of the polymer film Cu (1,2,4-TA) _2.CMP chemical reaction during activation The reduction in energy does not change with the content of 1,2,4-triazole in the polishing solution, but the chemical reaction on the wafer surface during the CMP process is activated with respect to BTA using the polishing solution containing 1,2,4-triazole Can reduce the amount of large, indicating that the strong chemical machinery to promote the results of this study for the optimization of CMP polishing fluid provides a theoretical support.