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外延侧向附晶生长(ELO)技术是在单晶硅上面的氧化岛的边缘引晶并在氧化层上附晶生长CVD硅来形成SOI层; ELO技术用常规的外延反应炉来生长外延硅;与别的SOI方法相比,这种SOI膜的缺陷密度低而且支承ELO硅的片子不发生曲翘变形;SOI/ELO膜的电学特性,诸如迁移率和寿命,与在同样反应炉中生长的同质外延层的电学特性类似;文中讨论了与ELO和选择外延生长(SEG)相关的问题;我们将介绍缺陷结构、生长速率与图形几何尺寸的关系和附晶生长速率方面的现况,我们还将讨论ELO/SEG膜的电学特性,特别是(用CVD附晶生长形成的)SiO_2/Si界面特性;文中将描述获得在硅膜下有连续氧化层的SOI膜所用的工艺,还将讨论制备这些薄层的潜力和所面临的问题。
Epitaxial Lateral Epitaxial Growth (ELO) technology is the edge of the oxide islands above the single crystal silicon seeding and CVD growth of silicon oxide on the oxide layer to form the SOI layer; ELO technology using a conventional epitaxial reactor to grow epitaxial silicon ; This SOI film has a low defect density and does not suffer from warp deformation compared with other SOI methods; the electrical characteristics of the SOI / ELO film, such as the mobility and the lifetime, are similar to those in the same reactor Similar electrical properties of the homoepitaxial layer are discussed; problems associated with ELO and selective epitaxial growth (SEG) are discussed herein; we will describe the relationship between defect structure, growth rate and geometrical dimensions of the figure, We will also discuss the electrical characteristics of ELO / SEG films, in particular, the SiO 2 / Si interfacial properties (formed by CVD growth); a process for obtaining SOI films with a continuous oxide layer beneath the silicon film will be described herein, Discuss the potential and problems of preparing these thin layers.