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为研究氧化依（ＩｒＯ_２）对ＰＺＴ铁电薄膜疲劳性能的影响，利用直流（ＤＣ）磁控反应溅射（ｓｐｕｔｔｅｒｉｎｇ）工艺成功地在ＳｉＯ_２／Ｓｉ（１００）衬底上制得了高度取向的ＩｒＯ_２薄膜．并在其上制成ＰＺＴ铁电薄膜．讨论了溅射参数（溅射功率、 Ａｒ／Ｏ_２比、衬底温度）以及退火条件对氧化铱薄膜的结晶、取向和形态的影响．
In order to study the effect of IrO_2 on the fatigue properties of PZT ferroelectric thin films, a highly oriented IrO_2 thin film was successfully deposited on a SiO_2 / Si (100) substrate by a DC magnetron reactive sputtering process . And made of PZT ferroelectric thin film on it. The effects of sputtering parameters (sputtering power, Ar / O 2 ratio, substrate temperature) and annealing conditions on the crystallization, orientation and morphology of iridium oxide films were discussed.