引言近儿午来,离子注入硅的激光退火研究,引起了人们广泛的兴趣。许多文献报导,高功率脉冲激光退火,能够消除离子注入硅引起的辐射损伤,并使非品态转变为单品。但是,对于激光退火硅样品表面的氧沾污和扩散问题却研究不多。从仅有的研究中发现,不同作者所得结果颇不一致。文献[4,5]从深能级的瞬态谱研究结果证实,经激光退火 Introduction Nearly a dozen years ago, ion implantation of silicon laser annealing research has aroused widespread interest. Many articles have reported that high-power pulsed laser annealing can eliminate radiation damage caused by ion-implanted silicon and convert non-product to single product. However, there is not much research on the problem of oxygen contamination and diffusion on the surface of laser annealed silicon samples. From the only study found that the results obtained by different authors quite inconsistent. Literature [4,5] from the deep level transient spectroscopy confirmed that the results of the laser annealing