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关于氢化非晶硅(a-Si:H)中光致亚稳性退化(Staebler-Wronski效应)虽已进行了大量研究,但对其物理机制至今还是不清楚的,已有物理模型都有它自己的困难.本文指出,光激产生的导带电子与价带空穴通过Si-H弱键的无辐射复合时放出的Si-H 局域模振动声子使Si-H键自身断裂而造成硅悬挂键——SW缺陷.该模型可以定性解释我们所知道的重要实验事实.
Although a great deal of research has been done on the photodisplascent degradation (Staebler-Wronski effect) in hydrogenated amorphous silicon (a-Si: H), its physical mechanism is still unclear so far. Own difficulty.It is pointed out that Si-H bond breakage caused by the Si-H local mode vibration phonons released when the conduction band electron and the valence band holes generated by photo-excitation are radiated by the radiationless recombination of Si-H bond Silicon dangling bonds - SW defects. This model can qualitatively explain the important experimental facts we know.