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对 Ga As/ Al Ga As量子阱红外探测器器件进行显微荧光光谱 (μ- PL)测量 ,光谱中表征势垒、势阱基态间光跃迁能量位置的荧光峰直接与势垒中 Al含量相关 ,通过光谱实验上对势垒和量子阱带间跃迁能量的确定并结合有效质量理论的计算 ,获得了 Al组分和阱宽值 ,并由此推算出相应的红外探测响应波长 ,与光电流谱的实验结果相比吻合良好 .这种材料的测量结果有利于器件制备的材料筛选
Micro-fluorescence spectroscopy (μ-PL) measurement of Ga As / Al Ga As quantum well infrared detector device, the spectrum of the potential barrier, the fluorescence peak position of the optical transition between the potential well ground state directly with the Al content in the barrier , The Al component and the well width were obtained through the spectral experiments on the determination of the transition energy between the barrier and the quantum well interband and combined with the calculation of the effective mass theory. Correspondingly, the corresponding infrared detection response wavelength was calculated and compared with the photocurrent The experimental results of the spectra are in good agreement with the results of this material measurement.