人们在研究微波单片集成电路时,提出了平面栅条状Schottky结变容管。本文根据“椭圆柱面结耗尽层分析”结果,分析了平面栅条状Schottky结电容与偏压的关系。 平面栅条状Schottky结变容管示意于图1,图中电极A(长为l_a,宽为W)是Schottky势垒金属,电极B(长为l_b)与n-GaAs间呈欧姆接触,电极A、B间距为l_(ab)。显然,这种“栅状”变容管的制作与GaAs MESFET器件工艺类似。 如图1(b)所示,在电极A上外加一偏压V_A(负值)后,电极A下n-GaAs中即出现相应的耗尽层,假设完全耗尽,在椭圆坐标中(图2),外加偏压与耗尽层的关系可表示为 People in the study of microwave monolithic integrated circuits, proposed a flat grating Schottky junction varactor. Based on the results of “depletion layer analysis of elliptic cylinder junction”, the relationship between the capacitance of the planar grid Schottky junction and bias voltage is analyzed. The planar gate strip Schottky junction varactor is shown in FIG. 1, in which electrode A (length l_a, width W) is Schottky barrier metal, electrode B (length l_b) is in ohmic contact with n-GaAs electrode A, B spacing for the l_ (ab). Obviously, this “grid-like” varactor fabrication is similar to the GaAs MESFET device process. As shown in Fig. 1 (b), after applying a bias voltage V_A (negative value) to the electrode A, a corresponding depletion layer appears in the n-GaAs under the electrode A, assuming complete depletion. In the elliptic coordinates 2), the relationship between applied bias and depletion layer can be expressed as