据《Semiconductor FPD World》2002年第12期报道,韩国首次开发成功6英寸级GaAs 外延片,并正式投入批量生产。该外延片比原来的 Si 外延片,在电子迁移率方面更快5～6倍,且降低了噪声系数,主要应用于卫星传输和移动通信领域。在此之前,韩国的此类产品全部依赖于进口。 According to “Semiconductor FPD World” No.12, 2002, it is reported that South Korea successfully developed the first 6-inch grade GaAs epitaxial wafers and officially put into mass production. The epitaxial wafers are 5 to 6 times faster than the original Si epitaxial wafers in electron mobility and reduce the noise figure, which is mainly used in the fields of satellite transmission and mobile communications. Before that, all of South Korea’s products relied on imports.