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研究了石墨烯纳米带横向p-i-n结构探测器对太赫兹波的响应特性,基于载流子输运方程和泊松方程,建立了考虑迁移、扩散、生成、复合等载流子运动的太赫兹探测器数学模型。根据该模型,对石墨烯纳米带横向p-i-n结构的太赫兹波响应进行了仿真,获得了反向栅压诱导生成的p-i-n二极管的能带图;进而探讨了纳米带宽度、i区长度及偏置电压对响应电流的影响,分析表明石墨烯纳米带带隙随宽度增大而减小,响应频率减小;i区长度与载流子寿命匹配时响应电流达到峰值;光电流随偏置电压的增大而增大,并趋于饱和。
Based on the carrier transport equation and the Poisson equation, the effect of terahertz wave on the response of the graphene nanoribbon transverse pin structure detector to terahertz wave is studied. The terahertz detector is designed to consider the carrier movement such as migration, diffusion, generation and recombination mathematical model. According to the model, the terahertz wave response of the lateral pin structure of graphene nanoribbon was simulated and the energy band diagram of the pin diode induced by the back-gate voltage was obtained. Furthermore, the effects of nanoribbon width, i-region length and bias Voltage on the response current, the analysis shows that the bandgap of graphene nanoribbon decreases with increasing width and the response frequency decreases; the response current reaches the peak when the length of i region matches the carrier lifetime; the photocurrent with the bias voltage Increase and increase, and tend to saturation.